<div class> <p> <br/> 夏从新</strong>:男,汉族,1979年10月,河南永城人。副教授,硕士生导师。2004年6月毕业于河南师范大学物理与信息工程学院,获硕士学位,留校从事教学和科研工作。2007年7月晋升讲师,2010年11月破格晋升副教授。<br/> <br/> 教学工作:</strong><br/> 主要承担《固体物理》(春季),《普通物理》(秋季)的本科生教学工作。<br/> <br/> 研究领域:</strong><br/> 主要从事半导体光电子学及器件的理论研究和设计。迄今为止,已在J.Appl.Phys 和J.Opt.Soc.Am.B等SCI源期刊上发表论文40余篇。近期研究兴趣:<br/> 1)宽带隙半导体材料中光电性质的理论研究。<br/> 2)III族氮化物半导体基光电子器件的理论模拟和设计。<br/> 3)低维半导体结构的量子调控。<br/> 4)高效太阳能电池材料的理论模拟。<br/> <br/> 国家级项目:</strong><br/> 主持国家自然科学基金项目“GaN基量子结构的非线性光学性质”[批准号:60906044,22万,2010.1—2012.12]。<br/> <br/> 近期代表性文章:</strong><br/> [1] Electric field effects on optical properties in zinc-blende InGaN/GaN quantum dot<br/> Congxin Xia,Zaiping Zeng,Shuyi Wei<br/> Journal of Luminscence,131(2011)623.<br/> [2]Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well<br/> Congxin Xia,Yanping Zhu,Shuyi Wei<br/> Physics Letters A 375(2011)2652<br/> [3]Nonlinear Franz-Keldysh effect:two photon absorption in a semiconducting quantum well<br/> Congxin Xia,H. N. Spector<br/> Journal of the Optical Society of America B 27(2010)1571.<br/> [4]Electron and impurity states in GaN/AlGaN coupled quantum dots:Effects of electric field and hydrostatic pressure<br/> Congxin Xia,Zaiping Zeng,Shuyi Wei<br/> Journal of Applied Physics 108(2010)054307.<br/> [5]Shallow-donor impurity in zinc-blende InGaN/GaN asymmetric coupled quantum dots:effect of electric field<br/> Congxin Xia,Zaiping Zeng,Shuyi Wei<br/> Journal of Applied Physics 107(2010)054305.<br/> [6]Effects of applied electric field and hydrostatic pressure on donor impurity states in cylindrical GaN/AlN quantum dot<br/> Congxin Xia,Zaiping Zeng,Shuyi Wei<br/> Journal of Applied Physics 107(2010)014305<br/> [7] Nonlinear Franz-Keldysh effect:two photon absorption in semiconducting quantum wires and quantum boxes<br/> Congxin Xia,H. N.Spector<br/> Journal of Applied Physics 106(2009)124302/1-6.<br/> (selected for the Vo1.21,No.1 of Virtual Journal of Nanoscale Science & Technology)<br/> [8] Franz-Keldy effect in the interband optical absorption of semiconducting nanostructures<br/> Congxin Xia,H. N.Spector<br/> Journal of Applied Physics 105(2009)084313.<br/> [9] Barrier width dependence of the donor binding energy of hydrogenic impurity in wurtzite InGaN/GaN quantum dot<br/> Congxin Xia,Zaiping Zeng,Shuyi Wei<br/> Journal of Applied Physics 106(2009)094301.<br/> [10]Electric field effect on the donor impurity states in zinc-blende symmetric InGaN/GaN coupled quantum dots<br/> Congxin Xia,Zaiping Zeng,Shuyi Wei<br/> Physics Letters A 374(2009)97.<br/> <br/> 联系方式:</strong><br/> 邮件:xiacongxin@htu.cn<br/> 地址:河南师范大学物理与信息工程学院<br/> 邮编:453007<br/> <br/> *如果发现导师信息存在错误或者偏差,欢迎随时与我们联系,以便进行更新完善。联系方式>></a></p> </div>